Abstract
A thin-film transistor (TFT) non-volatile memory (NVM) device was fabricated using α-helix poly(γ-methyl-L-glutamate) (PMLG) as a ferroelectric layer. In order to study the mechanism of memory driving, the temperature dependence of transfer characteristics and memory performance was investigated. It was revealed that the cooperative movement of the large dipole moment along the rod-like main chain and that of the small dipole moment in the side chain played an important role in the memory function.
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