Abstract
Photosensors responsive to the short wavelength infrared (SWIR) spectra are used in a variety of applications including environmental monitoring, medical diagnosis and optical communications. However, most organic semiconductors do not absorb in the SWIR region. Here we show novel donor-acceptor polymers with narrow bandgap responsive in the SWIR region, and the polymers are processed into photodiodes with structure of ITO/PEDOT:PSS/Bulk Heterojunction (BHJ)/Al. The performance of devices with different polymer structures are compared through metrics including detectivity, quantum efficiency, response time and rectification ratio, to determine the mechanisms of charge recombination loss in charge transfer states and charge transport process. We also use different solution-processed interfacial functional layers (e.g. ZnO, MoO3, TiO2) as electrode interface structures. The results provide guideline for selecting suitable polymers and design of device structures, to enable high performance SWIR photosensor via scalable solution-processed fabrication.
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