Abstract
Short wavelength infrared (SWIR) sensors are important to applications in environmental monitoring, medical diagnosis and optical communications, but there are only a few organic semiconductors that show optoelectronic response in the SWIR region. Recently we demonstrated a family of novel donor-acceptor polymers with narrow bandgap responsive in the SWIR region, and the bulk heterojunction photodiodes based on these polymers show detectivity up to 1E11 Jones at a wavelength of 1.37 micron, with absorption edge extending out to 1.7 micron. A SWIR photodiode was incorporated into the etalon-array reconstructive spectroscopy system to demonstrate its imaging capabilities. As the initial performance is very promising, we proceed to investigate the stability of the encapsulated devices and to infer the degradation mechanisms. The performance of photodiodes were monitored by IV measurement, external quantum efficiency (EQE) and electrochemical impedance spectroscopy. The IV measurement and electrochemical impedance spectroscopy were conducted both in the dark and under illumination, to track over several weeks the change in charge generation and recombination processes under the short circuit and open circuit conditions. The characteristics from band-to-band absorption and from absorption in charge-transfer states were compared to quantify the lifetime and recombination losses of photogenerated carriers in these devices.
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