Abstract
In this article, we presented a study of InAs0.04P0.96/InP Bragg-spaced quantum wells (BSQWs), which were grown by metal organic chemical vapor deposition (MOCVD). The quantum wells were characterized by photoluminescence (PL), double-crystal x-ray diffraction (DC-XRD), and reflection spectra. We found that the BSQWs structure grown at 580°C appears to be extremely abrupt, uniform, free of misfit dislocations, and of narrow PL line width. From the reflection spectra at different temperatures, we presented a theoretical analysis of the changes in band structure for resonant and near-resonant wells, and proposed a new scheme of using the temperature to tune the Bragg resonance of Bragg spaced quantum wells.
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