Narrow bandgap two-dimensional Nb2SiTe4 as broadband saturable absorber for optical switch

Abstract

Nb2SiTe4 is a novel narrow-bandgap (∼0.39 eV) two-dimensional material with a high optical absorption coefficient, high carrier mobility, and outstanding air stability, which shows great application potential in broadband optical switches. In this study, high-quality layered Nb2SiTe4 nanosheets were efficiently fabricated by the mechanical exfoliation method, and the basic characterizations were carried out comprehensively. Nondegenerate pump-probe technology was implemented to systematically explore the photocarrier dynamics in the Nb2SiTe4 nanosheets, which exhibit the ultrafast recovery time of Nb2SiTe4 (∼0.3 ps). Furthermore, broadband passively Q-switched lasers operating at 1.0, 2.0, and 2.8 μm with the shortest pulse width of 380, 549, and 218 ns were achieved based on Nb2SiTe4 saturable absorber. This work demonstrates the significant advantages of an optical switch based on Nb2SiTe4 saturable absorber, including a narrow output pulse width, wide working bandwidth, high damage threshold, excellent oxidation resistance, and a straightforward synthesis method, which underscore the immense potential of Nb2SiTe4 broadband optical switches in applications involving mid-infrared lasers.