Abstract
Theoretical calculations have been performed for the temperaturestability of the c-axis oriented LiNbO3 thin film layered structureson passivated silicon (SiO2/Si) substrate with and without anon-piezoelectric SiO2 overlayer. The phase velocity, electromechanicalcoupling coefficient and temperature coefficient of delay (TCD) have beencalculated. The thicknesses of various layers have been determined foroptimum SAW performance with zero TCD. The presence of a non-piezoelectricSiO2 overlayer on LiNbO3 film is found to significantly enhance thecoupling coefficient. The optimized results reveal that a high couplingcoefficient of K2 = 3.45% and a zero TCD can be obtained in theSiO2/LiNbO3/SiO2/Si structure with a 0.235λ thickLiNbO3 layer sandwiched between 0.1λ thick SiO2 layers.
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