Abstract
The known types of semiconductor temperature sensors show fast degradation of their main characteristics under influence of gamma irradiation. We present a new type of diode temperature sensors (DTSs) developed on the base of heavily doped silicon structures with high irradiation resistance for use in radiation environments. These DTSs are advanced devices with high sensitivity, accuracy, reproducibility, and easily adaptive with electronic equipment when operating in long circuits. On the base of the performed experimental and theoretical investigations of the diode structures, a new method has been proposed to determine optimal DTSs operating regime being the most resistant to gamma irradiation.
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