Abstract
The problem of expansion of the range of functioning of diode thermosensors in the region of high temperatures is considered and some of the results of the author’s research in this area are given. To solve this problem, it is proposed to use diode structures based on wide bandgap semiconductor compounds in the III-V system. The technological method of producing prototypes of high-temperature diode temperature sensors based on GaP is developed. The presented method allows manufacturing samples of diode temperature sensors, the high-temperature limit of which exceeds the limit of functioning of commercial silicon diode temperature sensors by about 200–300 K. The experimental methods of obtaining epitaxial structures of solid solutions of AlGaAs and fabricating diode temperature sensors based on them are developed. It is shown that the approach chosen in this work allows extending the thermometric characteristics of such diodes in the high-temperature region by approximately 150–250 K. The paper presents the methodology for forming InGaN device structures and production of prototype high-temperature diode temperature sensors based on them. This technique with revisions can be used for the manufacture of diode temperature sensors and other devices for high-temperature applications, the entire range of solid solutions in the InN-GaN system. The parameters and characteristics of the obtained diode temperature sensors are investigated. The results of the research can be used by specialists in the field of electronics and optoelectronics in the development and production of semiconductor devices.
Highlights
The distinctive feature of the development of the modern science and technology is a permanently existing trend in the growth of operating temperatures of the devices, units and various installations being exploited in harsh environments
The studies conducted have shown that growing of n-GaP layers by using the temperature-gradient zone melting method (TGZM) in an atmosphere containing nitrogen ions reduces the concentration of residual impurities in the layers down to the level of ≤5∙1014 cm-3
Results of research of diode temperature sensors (DTS) based on AlGaAs/ GaAs epitaxial structures
Summary
The distinctive feature of the development of the modern science and technology is a permanently existing trend in the growth of operating temperatures of the devices, units and various installations being exploited in harsh environments. The expansion of the operating interval of semiconductor devices in the range of high temperatures is the actual task of extreme electronics and optoelectronics [1]. These studies are most in demand in the diode thermometry [2, 3]. It is known [4] that the temperature range being measured is determined by the length of the temperature response characteristic (TRC) of the diode. The development of device structures, designs and technologies of wide-band semiconductor diodes has a certain practical perspective
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