Temperature sensitivity analysis of dual material stack gate oxide source dielectric pocket TFET

Abstract

The variation of the temperature-dependent performance of an electronic device is one of the major concerns in predicting the actual electrical characteristics of the device as the bandgap of semiconducting material varies with temperature. Therefore, in this article, we investigate impact of temperature variations ranging from 300 to 450K on the DC, analog/ radio frequency, and linearity performance of dual material stack gate oxide-source dielectric pocket-tunnel-field-effect transistor (DMSGO-SDP-TFET). In this regard, a technology computer-aided design simulator is used to analyze DC, and analog/radio-frequency performance parameters, such as carrier concentration, energy band variation, band-to-band tunneling rate, $$I_\mathrm{DS}-V_\mathrm{GS}$$ characteristics, transconductance ( $$g_{m}$$ ), cut off frequency ( $$f_{T}$$ ), gain-bandwidth product, maximum oscillating frequency ( $$f_{\max }$$ ), transconductance frequency product, and transit time ( $$\tau $$ ) considering the impact of temperature variations. Furthermore, linearity parameters, such as third-order transconductance ( $$g_{m3}$$ ), third-order voltage intercept point (VIP3), third-order input-interception point (IIP3), and intermodulation distortion (IMD3) are also analyzed with temperature variations as these performance parameters are significant for linear and analog/radio-frequency applications. Moreover, the performance of the proposed DMSGO-SDP-TFET is compared with the conventional dual-material stack gate oxide-tunnel-field-effect transistor (DMSGO-TFET). From the comparative analysis, in terms of percentage per kelvin, the DMSGO-SDP-TFET demonstrates lesser sensitivity towards temperature variation. Hence, the proposed DMSGO-SDP-TFET is a suitable candidate for low-power switching, and biosensing applications at elevated temperatures as compared to conventional DMSGO-TFETs.