Abstract
sition Cu0:1Ni0:1Co1:6Mn1:2O4 (with p + -types of electrical conductivity), Cu0:1Ni0:8Co0:2Mn1:9O4 (with p-types of electrical conductivity) and their multilayer p + -p structures were fabricated and studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 ‐ C. It is shown that degradation processes connected with diusion of metallic Ag into film grain boundaries occur in one-layer p- and p + -conductive thick films. The p + -p structures were of high stability, the relative electrical drift was not greater than 1%.
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