Temperature response of C13 atoms in amorphized 6H–SiC

Abstract

Implantation of C2+13 ions was employed to produce a concentration profile in 6H–SiC at 140K. In situ study of C13-implanted species was performed using the resonant reaction of C13(p,γ)N14 at Ep=1.748MeV. Significant C13 diffusion in the amorphized SiC does not occur up to 1130K. The presence of Au implants (1.9at.%) does not affect the C13 behavior. High-energy H+ irradiation also does not promote the C13 diffusion. The results suggest that C atoms are readily trapped locally in the SiC structure during disordering, which is important in understanding the amorphization and recrystallization processes in SiC.