Abstract
The temperature dependence of the conduction electron g factor in silicon is studied theoretically and experimentally. The theory of renormalization of the electron energy in an external magnetic field due to interaction with lattice vibrations is developed. According to the results of the calculation, in second-order perturbation theory, the temperature renormalization of the electron g factor is determined mainly by the difference between the processes of intervalley scattering that occur with spin preservation for spin-up and spin-down electrons. Experimental investigations of n-Si samples by the electron spin resonance method demonstrated the almost linear decrease in the conduction electron g factor with an increase in the temperature in a wide range from 80 to 300 K. The results of the calculation are in good agreement with the experimental data.
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