Abstract
Temperature dependence of the electron g-factor in silicon has been investigated both theoretically and experimentally. Theoretical consideration is based on the renormalization of the electron energy in a weak magnetic field by the electron-phonon interaction in the second-order perturbation theory. Interaction of the electron subsystem with the lattice vibrations results in decreasing the conduction electron g-factor. This decreasing was observed experimentally in the electron spin resonance studies for n-Si samples.
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