Abstract
We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much lower than that for bulk HgCdTe with the same bandgap and indicates suppression of (threshold) AR processes due to the symmetry of carrier dispersion curves. We demonstrate that QW-specific, non-threshold AR contributes strongly to the temperature quenching of laser action from HgTe/CdHgTe QWs. We expect, however, that the above processes may be partially suppressed via introduction of wide-gap CdHgTe barrier layers with a [Cd] fraction of 80% or higher. In this case, lasing up to at least 270 K at 3.7 μm wavelength seems feasible.
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