Auger recombination in strained quantum well InAlAsSb/GaSb structures for 3–4 µm lasers

Abstract

Thresholdless Auger recombination in InAlAsSb strained quantum wells is studied theoretically. Analytical formulas for the Auger transition matrix element have been derived in the framework of the Kane model. A detailed analysis of overlap integrals between initial and final states of carriers has shown that the strain and light–heavy hole mixing affect both qualitatively and quantitatively the overlap integral between the electron and hole states. The Auger recombination coefficient is found to have a strong dependence on strain, quantum well width and emission wavelength, but weak dependence on temperature. The Auger coefficient temperature dependence is shown to be very sensitive to the bandgap variation with temperature.