Temperature-insensitive photoluminescence above 300 K in strained GaxIn1 − x As multiple quantum wire heterostructures

Abstract

Stable peak wavelength photoluminescence (PL) spectra has been observed in Ga x In 1 − x As strained multiple quantum wire (MQWR) heterostructures over a temperature range between 250 and 380 K. The MQWR samples were grown in situ by molecular beam epitaxy using the strain-induced lateral-layer ordering (SILO) process to create the quantum wires. The formation of the strained Ga x In 1 − x As quantum wires and the amount of the strain associated with the wires depends on the growth conditions and structural configuration of the MQWR active region. Samples grown near a substrate temperature of 500°C show a negligible net PL peak wavelength shift between 77 and 380 K. Red shifts and blue shifts of PL peak wavelengths between 77 and 380 K are observed in samples grown at temperatures less than and greater than 500°C, respectively. Due to the multi-axial strain fields induced by the SILO process in the MQWR active regions, the PL peak wavelength of all the MQWR samples stabilize at ∼ 1.61 μ m for temperatures above 250 K. The temperature dependent shift of peak PL wavelength between room temperature and 72°C for these MQWR heterostructures is as low as 0.2 Å/°C.