Abstract
Temperature-insensitive characteristics have been demonstrated in single mode 1.06 μm InGaAs single-quantum-well laser diodes grown by metalorganic vapor phase epitaxy. The large band-gap AlGaInP current blocking layer is employed in the buried-ridge laser structure. Tensile-strained GaAsP barrier layers were used for strain compensation and electron barriers for reducing electron overflow from a quantum well. As a result, almost totally temperature-insensitive light output-current characteristics have been realized. The uncoated device shows the highest record characteristics temperature of 437 K for the threshold current in the range of 20–50 °C. In addition, the slope efficiency does not change over 20–80 °C.
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