Abstract
In this paper, 5-pair InAs/GaAs QDIPs with tunable dark current blocking barrier resulting from a p-type doped GaAs layer are fabricated. With a proper choice of the p-type doping density, temperature- insensitive detectivities up to 110 K at low applied voltage 0.8 V are obtained. The phenomenon is attributed to the one order of magnitude increase of photocurrent with increasing temperature resulting from the increase of transition probability with more available empty excited states at higher temperature. The results have shown superior high-temperature operation of the asymmetric QDIP structure than the symmetric device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
