Temperature-induced activation and reversal of the relativistic ratchet currents on a graphene chip model

Abstract

We investigate a monolayer graphene chip’s relativistic ratchet current (RRC). Our findings indicate that thermal noise can paradoxically amplify the RRC, in contrast to its conventional inhibitory role. Under noise, temperature (T) activation of the RRC remains stable over a broader range of T values, and an increased number of RRCs reversals are observed as a function of T and relevant parameters of the external electric field. The results regarding structural changes and symmetry breaking of the dissipative attractors can be understood. The observed activation and reversal of RRCs under a variation of external parameters unveil the diverse and complex behavior of the charge carrier transport on the graphene chip. Understanding this behavior allows for generating specific RRCs values, properties and effects for the charge carriers, offering a variety of possibilities for application and control of the graphene chip device.