Abstract
Silicon carbide devices have become increasingly popular in electric vehicles, predominantly due to their fast-switching speeds, which allow for the construction of smaller power converters. Temperature sensitive electrical parameters (TSEPs) can be used to determine the junction temperature, just like silicon-based power switches. This paper presents a new technique to estimate the junction temperature of a single-chip silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET). During off-state operation, high-frequency chirp signals below the resonance frequency of the gate-source impedance are injected into the gate of a discrete SiC device. The gate-source voltage frequency response is captured and then processed using the fast Fourier transform. The data is then accumulated and displayed over the chirp frequency spectrum. Results show a linear relationship between the processed gate-source voltage and the junction temperature. The effectiveness of the proposed TSEPs is demonstrated in a laboratory scenario, where chirp signals are injected in a stand-alone biased discrete SiC module, and in an in-field scenario, where the TSEP concept is applied to a MOSFET operating in a DC/DC converter.
Highlights
High-temperature, high-frequency converters are becoming increasingly important in electric vehicles (EVs) [1], continuous developments of wide-bandgap semiconductor devices allow power converters to meet the requirements for EVs
According to the literature so far, dynamic Temperature sensitive electrical parameters (TSEPs) are unsuitable for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET), mainly due to noise issues caused by significant switching transients
Conventional TSEPs measure voltages and currents within the switch. This works well for Si MOSFETs but due to noise issues, it is less effective for SiC MOSFETs
Summary
High-temperature, high-frequency converters are becoming increasingly important in electric vehicles (EVs) [1], continuous developments of wide-bandgap semiconductor devices allow power converters to meet the requirements for EVs. RG(int) represents the resistance of the polysilicon gate and metal contact in a MOSFET device and cannot be directly measured using terminal connections. For this reason, this TSEP is dynamic as it captures one point during the switching process. According to the literature so far, dynamic TSEPs are unsuitable for SiC MOSFETs, mainly due to noise issues caused by significant switching transients. Energies 2021, 14, 4912 cannot be directly measured using terminal connections The proposed work in this paper is built on thethe knowledge gained from [24]
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