Abstract
Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been widely used in small and medium capacity and high frequency power conversion systems. The reliability of Power MOSFET is closely related to junction temperature, but the research on the temperature sensitive electrical parameter (TSEP) method in power MOSFET junction temperature prediction is still immature. This paper proposes a method to extract the junction temperature of Power MOSFET by using the turn-off energy loss (Eoff), the correlation and sensitivity between Eoff and junction temperature from the perspective of semiconductor physics are analyzed. Further, from the perspective of experimental research, the sensitivity of various TSEPs to junction temperature extraction was analyzed and compared, which verified the superiority of Eoff for power MOSFET junction temperature extraction. Finally, Eoff is used as the TSEP to predict the junction temperature of Boost circuit, and its effectiveness is proved.
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