Abstract
A computer simulation based on an advanced self-consistent thermal–electrical finite-element approach has been carried out to analyse electrical and thermal phenomena in possible electrically-biased axially-symmetric annular-contacted nitride VCSELs (vertical-cavity surface-emitting lasers). Joule heating within the upper p-type GaN layer has been determined to be the distinctly dominant heat source in this device. Our analysis revealed that during a continuous-wave (CW) room-temperature (RT) device operation, the highest-temperature area constitutes a ring within the above-mentioned layer close to the active-region perimeter. It dramatically enhances radial current flow from the annular p-side contact towards the centre of the structure before crossing the p–n junction. Therefore current injection into a central active region is considerably improved (by almost 170%!) in RT CW-operating nitride devices as compared with pulse-operating ones. Hence temperature-enhanced radial current spreading within the upper part of the annular-contacted CW nitride VCSELs may enable one to obtain their first RT operation.
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