Temperature effects on the Si/SiO 2 interface defects and suboxide distribution

Abstract

Temperature effects on the Si/SiO 2 (0.5–5 nm thick) interface defects and suboxide distribution are studied by electron paramagnetic resonance and conventional X-ray photoelectron spectroscopy. The experiments are made on porous (66% porosity) silicon samples (10 μm thick) thermally oxidized in the 400–1000°C temperature range. Electron paramagnetic resonance measurements (∼9.6 GHz, 25°C) show a decrease of the density of broken bonds called P b1 when the oxidation temperature increases. However no change of the interfacial structure is observed through the suboxide distribution. We interpret our results in terms of viscoelastic relaxation.