Abstract
The nature of surface defects in insulating films and interface defects between a-Si:H and insulating layers was investigated by electron spin resonance measurements. Surface state densities in a-Si:H, a-SiN 1.7:H and a-SiO 2.0 were estimated by the thickness dependence of ESR signal intensity. The interface state densities in a-SiN 1.7:H/a-Si:H and a-SiO 2.0/a-Si:H were estimated by using stacked structures of the thin layers. These results were compared with results of photothermal deflection spectroscopy. The main peak of electron spin resonance absorption in these structures was near g = 2.0055. This value means that the defects in these structures lie at the a-Si:H side of the interface. The results obtained by the electron spin resonance measurements are consistent with our previous report that the interface defects in the top insulator structures are formed by plasma surface reaction.
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