Abstract
This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2is an attractive candidate as a high-κdielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2gate dielectric TFT exhibiting high mobility, a highION/IOFFratio, lowIOFFcurrent, and excellent subthreshold swing (SS).
Highlights
In recent years, transparent oxide thin film transistors (TFTs) have attracted substantial attention because of their potential application in the display industry as next-generation thin film transistors
This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material
Amorphous indium gallium zinc oxide (a-IGZO) provides numerous advantages compared with polysilicon, including a high carrier mobility rate, a high switching current ratio, a low-temperature process, excellent uniformity, excellent transparency to visible light, and large-area processes, facilitating its integration in highresolution displays [1,2,3,4,5]
Summary
Transparent oxide thin film transistors (TFTs) have attracted substantial attention because of their potential application in the display industry as next-generation thin film transistors. Amorphous indium gallium zinc oxide (a-IGZO) provides numerous advantages compared with polysilicon, including a high carrier mobility rate, a high switching current ratio, a low-temperature process, excellent uniformity, excellent transparency to visible light, and large-area processes, facilitating its integration in highresolution displays [1,2,3,4,5]. Regarding the high-κ dielectric thin film/IGZO interface, maintaining a high subthreshold swing (SS) and low carrier mobility is the critical concern when a high thermal budget is involved. To investigate these concerns, the effect of temperature on a-IGZO TFTs with HfO2 gate dielectric was studied by analyzing electrical characteristics and conducting material analysis. The optimal electrical characteristics of a-IGZO TFTs were determined
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