Abstract
An easy approach to control the carbon nanotube (CNT) array selectivity onSi/SiO2 in the floating chemical vapor deposition (CVD) method by adjusting the operationtemperature is demonstrated. Aligned CNTs can be obtained directly on Si using astandard procedure at a relatively low temperature. After analyzing the temperatureinfluence on different substrates, an attempt to grow an ultra-long CNT forest at theoptimized temperature and without any feedstock diffusion limitation is discussed.
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