Abstract
The behavior of an integrated traveling wave amplifier (TWA), fabricated in a 130 nm silicon-on-insulator (SOI) CMOS process, has been characterized over a temperature range from 25/spl deg/C to 250/spl deg/C. The TWA is a four-stage cascode design which uses floating body (FB) transistors and microstrip lines as passives. A gain of 7 dB with a 0.4-27 GHz bandwidth is measured under 1.4 V supply voltage. The effects of high temperature are observed on the gain of the TWA, as well as on the SOI transistors and the microstrip lines.
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