Abstract
In this paper, we have studied the influence of the temperature on the diamagnetic susceptibility of a shallow donor confined to move in a quantum box (QB) made out of GaAs/Ga1−xAlxAs with a uniform magnetic field. The Hass variational method within the effective mass approximation is used in the case of finite barrier confining potential. In the calculation, we have taken account of the electronic effective mass, dielectric constant and conduction band offset between the dot and the barriers varying with the temperature. We present our results as a function of the size of the box and the magnetic field intensity. The results obtained show that the temperature and the magnetic field effects on the diamagnetic susceptibility are appreciable and more pronounced for large dot. A good agreement is obtained with the existing literature.
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