Temperature effect on shallow impurity states in a wurtzite GaN/Al Ga1-N core-shell nanowire

Abstract

Abstract The binding energy of a donor impurity in a wurtzite GaN/AlxGa1-xN core-shell nanowire is investigated by a variational method combined with a finite-difference algorithm. A semi-empirical formula is derived to express the temperature dependence of static dielectric constants for wurtzite structure. The temperature influence on impurity binding energy is actually not very prominent when considering the temperature modulations on electronic effective mass, energy band gap and static dielectric constant. The electron bounded to an interface impurity is more sensitive to temperature, size and composition fluctuations. The relationship between the critical radius, at which the binding energy reaches a maximum value, and impurity position is obtained.