Abstract
This paper covers a numerical analysis of the self-heating effect and the effect of mutual heating of nearest neighbouring cells in low-voltage power VDMOS transistors. A temperature distribution within the cell as well as in the area between nearest neighbouring cells of VDMOS device operating in both linear and saturation region was calculated on the basis of proposed theoretical model.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
