Abstract
We numerically study Joule heating in a THz emitter made ofBi2Sr2CaCu2O8 + δ (Bi2212) single crystal with its CuO planes oriented perpendicular to supporting substrate. Thesingle crystal is glued to the substrate by a layer of PMMA. The electrical current is applied in thec-axis direction across many intrinsic Josephson junctions (IJJ’s) in Bi2212. Thecalculations show that the internal temperature increases to an acceptable 10–20 K only above the bath temperature for a Joule power density of ∼ 105 W cm − 3 typical for experiments on THz emission from IJJ’s. This makes the suggested geometrypromising for boosting the output power of the emitter.
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