Abstract
Effect of temperature on time-to-breakdown ( T BD) of n +-ringed n-channel MOS capacitors with atomic layer deposited TiN/HfO 2 based gate stacks is studied. While interfacial layer (IL) growth condition and thickness varied the high- κ layer thickness and processing was unchanged. These devices were investigated by applying a constant voltage stress (CVS) in inversion (substrate injection) at room and elevated temperatures. For high electric fields (10–15 MV/cm) across IL, it is observed that T BD is thermally activated irrespective of IL condition. Activation energies (2–3 eV after correction), found from Arrhenius plots of T BD for different IL conditions, show good matches with those associated with field-driven thermochemical model of breakdown developed for SiO 2.
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