Abstract
Threshold voltage analysis of surrounded gate SOI MOSFET is developed in terms of double gate and cylindrical gate MOSFETs. The temperature dependence of the threshold voltage is then studied using a Gaussian profile in the temperature range 77 to 520 K and the advantages of the surrounding gate over cylindrical and double gate SOI MOSFETs are discussed. The reduced short channel effect and operation over a large temperature range makes the surrounded gate SOI MOSFET a better choice for future VLSI/ULSI application.
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