Abstract
Highly strained InxGa1−xAs/GaAs double quantum well (DQW) structures grown by metal organic vapor phase epitaxy with different In compositions are investigated by surface photovoltage spectroscopy (SPS) in the temperature range 20–300 K. A lineshape fit of spectral features in the differential surface photovoltage (SPV) spectra determines the transition energies accurately. A comprehensive analysis of the anomalous phenomena appearing in lower temperature SPV spectra enable us to evaluate directly the band lineup of DQW and to remove the ambiguity in the identification of spectral features. The process of separation of carriers within the QW with possible capture by the interface defect traps plays an important role for phase change in SPV signal in the vicinity of light-hole related feature at low temperature. The results demonstrate the considerable diagnostic values of the SPS technique for characterizing these highly strained DQW structures.
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