Abstract
Surface photovoltage (SPV) spectra were measured for GaN0.014As0.986 layers at room temperature and compared with room temperature photoreflectance (PR) and contactless electroreflectance (CER) measurements. Spectral features related to E− and E+ transitions were clearly observed in SPV spectra at energies corresponding to PR and CER resonances. In this way it has been shown that SPV spectroscopy is an alternative absorption-like technique to study both the E− and E+ transitions in dilute nitrides. The observation of E+ transition in SPV spectra means that it is a direct optical transition at the Γ point of GaNAs band structure which can be explained by the band anticrossing interaction between the localized states of N and the extended conduction band states of the GaAs host.
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