Abstract
Temperature dependent time integrated and time resolved photoluminescence spectra of ZnO∕Zn0.74Mg0.26O single quantum wells with and without spontaneous piezoelectric field are measured. The piezoelectric field can exist up to room temperature. The enhancement of piezoelectric field at low temperature reduces the optical transition energy by 75meV from room temperature to 77K, and correspondingly the lifetime increases from 1to66ns. The nonradiative process is also weaker than the sample without piezoelectric field. A model in combination with piezoelectric field, free electrons in the well and quantum confinement is proposed and can be successfully used to explain the experimental data. The temperature dependent electron density is carried out with a donor density of 1.03×1020cm−3 and an activation energy of 61.6meV. At the request of the authors and editor, this article is being retracted effective 17 May 2007.
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