Temperature Dependent Performance Evaluation and Linearity Analysis of Double Gate-all-around (DGAA) MOSFET: an Advance Multigate Structure

Abstract

Multi-gate devices such as double gate, FinFET and Gate-All-Around (GAA) are potential candidates to achieve the performance expected by semiconductor association. This paper presents an analog/RF performance and linearity distortion analysis for an advance multigate structure named Double Gate-All-Around (DGAA) MOSFET. Temperature dependent characteristics of the DGAA MOSFET have also been investigated in detail from 200 K to 400 K. A comparative analysis between Gate-All-Around (GAA) and DGAA MOSFETs with impact of silicon film thickness is analyzed by using 3-D ATLAS TCAD device simulator. It is demonstrated that depending on gate voltage, DGAA MOSFET has larger value of drain current (Ids), transconductance (gm) and gain. Results demonstrate that drain current, transconductance, device gain and transconductance to drain current ratio (gm/Ids) improves when temperature is decreased. DGAA MOSFET shows improvement in analog/RF performance, suppressed Short Channel Effects (SCEs) and harmonics distortions due to more gate controllability on the channel charge.