Abstract
In this paper, The gate-material engineering technique is used on double gate all around (DGAA) MOSFET. The gate material engineering technique has two dissimilar materials with dissimilar work functions. The different materials have combined to make a single gate MOSFET. The silicon-tube double-gate-all-around MOSFET have two gates. There are one gate (inner gate) inside of silicon-tube and one gate (outer gate) outside of silicon-tube. ATLAS device simulation based comparative study of double material double gate all around (DMDGAA) and double gate all around (DGAA) Junction based MOSFETs have been performed. The simulation results express that this modification of MOSFET enhanced the ON-OFF current (I ON /I OFF ) ratio, greatly reduce the OFF current (I OFF ). The introduced modification also improves short channel effects (SCEs) compared to DGAA MOSFET. DMDGAA MOSFET provides high-speed and ultra-low power operation for Ultra large-scale integration (ULSI) applications.
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