Abstract
We report on detailed photoluminescence (PL) and photoluminescence excitation (PLE) studies of GaAs/A1GaAs single quantum wells (SQW) with differing well widths measured over temperatures ranging from 5K to 300K. A new trapping phenomenon was observed at low temperatures, which affects the linewidth and PL intensities (radiation lifetimes) of free excitons in the SQWs and which is related to the formation of bound excitons. At higher temperatures, excitonic linewidths were primarily broadened by optical phonon scattering. The temperature dependencies of the excitonic energies of SQWs were similar to that of bulk material and were independent of the quantum well width.
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