Abstract

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.

Highlights

  • We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs)

  • Much attention has been paid to the fabrication of semiconductor quantum dots (QDs) and to their optical properties

  • A novel growth technique was used to fabricate self-assembled GaAs/AlGaAs QDs [7]. These QDs offer several advantages compared to SK grown QDs: The grown material is ideally unstrained with sharp interfaces and emits light in the visible range

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Summary

Introduction

We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). Keywords GaAs quantum dots Æ Hierarchical selfassembly Æ Single dot spectroscopy Æ Room temperature luminescence Æ Photon correlation Single photon generation using single self-assembled QDs

Results
Conclusion

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