Abstract
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). The linewidth of a single-QD ground-state emission (≈ 8.5 meV) is comparable to the ensemble inhomogeneous broadening (≈ 12.4 meV). At low temperature (T ≤ 40 K) photon correlation measurements under continuous wave excitation show nearly perfect single-photon emission from a single GaAs QD and reveal the single photon nature of the emitted light up to 77 K. The QD emission energies, homogeneous linewidths and the thermally activated behavior as a function of temperature are discussed.
Highlights
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs)
Much attention has been paid to the fabrication of semiconductor quantum dots (QDs) and to their optical properties
A novel growth technique was used to fabricate self-assembled GaAs/AlGaAs QDs [7]. These QDs offer several advantages compared to SK grown QDs: The grown material is ideally unstrained with sharp interfaces and emits light in the visible range
Summary
We report on the experimental observation of bright photoluminescence emission at room temperature from single unstrained GaAs quantum dots (QDs). Keywords GaAs quantum dots Æ Hierarchical selfassembly Æ Single dot spectroscopy Æ Room temperature luminescence Æ Photon correlation Single photon generation using single self-assembled QDs
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