Abstract
Abstract We present the temperature dependent negative differential resistance behavior of (CH3)2NH2Mn (HCOO)3 crystals prepared by solvothermal synthesis. The paramagnetic to antiferromagnetic transition temperature, TN and paraelectric to ferroelectric transition temperature, Tc were at 8 K and 184 K respectively. Above 100 K, negative differential resistance peaks in the low bias voltage region (between −4 V and +4 V) of the current-voltage characteristic were observed till 224 K. Fowler Nordheim tunneling mechanism was the dominant current conduction mode in the temperature independent high bias region (±5 V to ±10 V). The highest peak to valley ratio of 10 was recorded at 176 K with a peak current, I peak of 2.7 × 10−11 A. The peak Vpeak and valley Vvalley were recorded at 1.5 V and 2.7 V respectively. The dielectric transition was found to be accompanied by an electronic transition of the metal to insulator type around 204 K.
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