Experimental Investigations Into Temperature and Current Dependent On-State Resistance Behaviors of 1.2 kV SiC MOSFETs

Abstract

Performance characterization for long-time operation of cryogenic SiC MOSFETs remains as a challenge that requires further investigation. This paper presents experimental investigations into temperature and current dependent on-state resistance behaviors of state-of-the-art 1.2 kV SiC MOSFETs from various well-known semiconductor manufacturers. In view of engineering applications, two fitted double-exponential functions are introduced to visually depict the interactions among the on-state resistance, junction temperature and drain current instead of considering the combined effects of electron mobility and ionized dopant concentration inside cryogenic SiC MOSFETs. Optimal operating temperature and current ranges are subsequently extracted to characterize the cryogenic operation performance, and thus to explore some operating and designing guidelines of cryogenic SiC MOSFETs and SiC-based power conversions at 77 K.