Abstract
The temperature-dependent anomalous optical properties of AlInGaN quaternary alloys have been studied using Monte Carlo simulation of phonon-assisted exciton hopping. The simulation results agreed well with the experimental photoluminescence linewidths and the peak energy positions while considering the additional inhomogeneous broadening with band potential fluctuation and the phonon-induced radiative lifetime of the exciton. The incorporation of band-gap shrinkage into the conventional Monte Carlo simulation shows a good fit for the photoluminescence peak energy positions in AlInGaN quaternary alloys with temperature-induced experimental unusual behavior (redshift-blueshift-redshift). The W-shaped temperature-dependent inhomogeneities are observed for the PL linewidths. The temperature-induced S-shaped photoluminescence band peaks and W-shaped linewidth have been attributed to the change of exciton dynamics due to the indium aggregated potentials and the exciton localization effects. These results could be important to understanding the realistic optical properties of AlInGaN quaternary alloy-based electronic and optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
