Abstract
We fabricated n-type Si-based TFETs with a Ge source on Si(110) substrate. The temperature dependent IDS–VGS characteristics of a TFET formed on Si(110) are investigated in the temperature range of 210 to 300 K. A study of the temperature dependence of ILeakage indicates that ILeakage is mainly dominated by the Shockley-Read-Hall (SRH) generation—recombination current of the n+ drain—Si substrate junction. ION increases monotonically with temperature, which is attributed to a reduction of the bandgap at the tunneling junction and an enhancement of band-to-band tunneling rate. The subthreshold swing S for trap assisted tunneling (TAT) current and band-to-band tunneling (BTBT) current shows the different temperature dependence. The subthreshold swing S for the TAT current degrades with temperature, while the S for BTBT current is temperature independent.
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