Abstract
The evolution of gaps in the one-electron density of states for the half-filled Hubbard model on a triangular lattice is studied as a function of both the temperature and the coupling constant (Hubbard U) using quantum Monte Carlo. The formation of gaps (or pseudogaps) at finite temperature allows us to distinguish between three regimes: (1) A strong-coupling Mott-Hubbard regime, characterized by a gap, which persists even at high temperatures; (2) a weak-coupling paramagnetic regime, characterized by the absence of a pseudogap at any finite temperature; and (31 an intermediate-coupling spin-density-wave regime, characterized by a pseudogap, which appears when U is increased beyond a critical (temperature-dependent) value. The behavior of the √3 X √3 adlayer structures on fourth-group semiconductor surfaces is briefly commented upon in the light of the above discussion.
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