Abstract
The electroluminescence from a Ge/GeSn/Ge p–i–n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13 A/cm2. We obtained no-phonon- and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni’s empirical expression with α = 4.884 × 10−4 eV/K and β = 130 K.
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