Abstract
MoS2 is one of the most promising materials due to its exciting properties. Al/MoS2/n–Si heterojunction diode was acquired via the formation of a MoS2 thin film on n–Si semiconductor using radio frequency (RF) sputtering technique and an evaporation of Al metal on MoS2/n–Si structure. The morphological and optical properties of the RF sputtered MoS2 thin film were examined using atomic force microscopy (AFM), scanning electron microscopy (SEM) and UV–vis data. The electrical parameters of Al/MoS2/n-Si heterojunction on temperature were investigated using its current-voltage (I–V) measurements within 150–400K in the dark. The results showed that while the ideality factor and series resistance values of the junction decreased, the barrier height values increased with the increase in temperature. The linear correlation between ideality factor and barrier height values was also reported for Al/MoS2/n–Si heterojunction.
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