Abstract
The temperature-dependent photosensitivity of InAs/GaAs self-assembled quantum dots at different vertical electric field strengths was studied. The analysis was performed with the help of a theoretical model of the carrier escape process, taking into account the deformation potential and the diffusion broadening of the heterointerface between the InAs quantum dots and the GaAs substrate, as well as excitonic effects. Conducted research allowed to determine the temperature dependence of carriers lifetimes in QDs relatively to the different emission mechanisms at several magnitudes of electric field strengths.
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