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Abstract
The temperature dependent DC/RF performance of Si-based resonant interband tunnelling diodes (RITDs) grown by low temperature molecular beam epitaxy was studied. Both DC and RF performance were measured at various temperatures from 20 to 150°C. At 20°C, the RITD exhibits a peak current density ( Jp) of 22 kA/cm2 with peak-to-valley current ratio (PVCR) of 2.0. The maximum resistive cutoff frequency (fr0) of 2.4 GHz was obtained by biasing the diode at 320 mV. Increasing temperature slightly degrades the PVCR and fr0. At 150°C, the PVCR and fr0 reduced to 1.8 and 1.9 GHz, respectively. The observed weak temperature dependence of the DC/RF performance and the GHz operating frequency make Si/SiGe RITDs a good candidate for high power microwave applications.
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